Name: /Tools-Info/Stp100n6f7 St
Brand: EstiSource
Availability: InStock

STP100N6F7 ST

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STP100N6F7 ST

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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One Click Product Costing

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STP100N6F7 Power MOSFET

is a high-performance N-channel Power MOSFET by STMicroelectronics, housed in the TO-220 package. It is engineered for applications requiring very low R_DS(on) and high switching frequency, making it suitable for DC-DC converters, motor drives, automotive power control units, and industrial systems. With a drain-source voltage of 100V and an impressive drain current of 100A, it’s particularly useful in designs where high load currents must be switched efficiently while minimizing conduction and switching losses.

This device is built using ST's advanced STripFET F7 technology, offering improved energy efficiency and thermal stability. Its TO-220 package makes it easy to mount and ideal for systems that require external heat dissipation through heatsinks.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the STP100N6F7 MOSFET. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-current, low-voltage power semiconductor components.

Why Choose EstiSource for Sourcing

At EstiSource, we simplify sourcing decisions for engineers, startups, and procurement professionals. Whether it’s a premium component like STP100N6F7 or its global alternates, our platform delivers insights on cost, availability, and sourcing risks — instantly. With our hybrid model of tech + sourcing partnerships, we offer smarter, faster, and safer component sourcing solutions.

1. Material Composition

▶

The STP100N6F7 comprises the following key materials:

Silicon Die: Built on a trench gate structure with STripFET F7 technology for superior performance.
Copper Leadframe: Provides mechanical and electrical interconnection between the silicon die and the package leads.
Molding Compound: Thermoset epoxy encapsulation for protection against environmental factors.
Bond Wires: Typically aluminum or gold wires used to electrically connect the die to the leadframe.
Tin- or Nickel-Plated Leads: Ensures solderability and protects against oxidation.
TO-220 Metal Tab: Exposed metal back surface designed for heat sinking and enhanced thermal conduction.

2. Manufacturing Process

▶

Wafer Fabrication: Using advanced trench MOSFET process with photolithography and ion implantation.
Die Separation: Individual chips are diced from the wafer.
Die Attach: Silicon dies are mounted to the copper leadframe using conductive epoxy.
Wire Bonding: Bonds internal connections from the die to the external leadframe.
Encapsulation: Epoxy molding to form the TO-220 package, while the back metal tab remains exposed.
Plating and Trim/Form: Final shaping of leads and coating for solderability.
Electrical Testing & Burn-In: Ensures functionality under high-current loads and heat.

3. Challenges & Limitations

▶

Heatsink Dependency

Without proper heatsinking, the high current capability can result in thermal runaway.

Electrostatic Discharge (ESD) Sensitivity

The gate of MOSFETs is highly sensitive to static electricity and requires careful handling.

Saturation in High Voltage Applications

Although it supports 100V, it is unsuitable for circuits requiring higher voltage margins (>150V).

Counterfeit Risk in Open Markets

ST-branded parts are frequently cloned; authentication and vendor verification is necessary.

TO-220 Assembly Limitations

Requires through-hole mounting; less compact than SMD versions in modern high-density boards.

4. Costing

▶

Bulk B2B Price: ₹40 – ₹65 per unit for orders above 1,000 pcs.
Prototype/Low Volume: ₹70 – ₹95 per unit (retail + handling overhead).

Factors Influencing Cost:

Regional supplier availability
Lead time (domestic vs. imported stock)
Heat sink or mounting kits
Branded packaging for ESD protection

Cost-Saving Alternatives: Comparable performance available in D2PAK (SMD) format or from vendors offering domestic equivalents.

5. Properties & Characteristics

▶

Type

N-Channel Power MOSFET

Technology

STripFET F7

Drain-Source Voltage (V_DS Max)

100V

Continuous Drain Current (I_D Max)

100A

On-Resistance (R_DS(on))

3.6 mΩ typical

Package

TO-220

Gate Charge (Q_g)

Low for fast switching

Thermal Resistance

<0.5 °C/W (junction-to-case)

Operating Temp Range

-55°C to +175°C

Use Case

Automotive ECU, DC motor drives, battery management, SMPS

6. Frequently Asked Questions

▶

Q1: What makes the F7 version different from standard MOSFETs?

A: ST’s F7 technology provides enhanced power density and lower R_DS(on), improving efficiency and reducing heat losses in high-current circuits.

Q2: Can I use this for EV or battery systems?

A: Yes, it’s suited for EV sub-systems like BMS, DC-DC converters, and low-voltage power stages.

Q3: Is it safe for PCB without heatsink?

A: For loads under ~20A, yes. But for full 100A operation, a heat sink is mandatory to avoid thermal damage.

Q4: What is a good SMD equivalent to STP100N6F7?

A: STD100N6F7 (D2PAK) offers similar performance with surface mount convenience.

Q5: Can it be used with microcontrollers directly?

A: It requires a gate driver or at least 10V gate signal. Direct MCU drive (3.3V/5V) isn't recommended without a buffer.

Precision in every estimate, excellence in Service.

STP100N6F7 ST

One Click Product Costing

1. Material Composition

2. Manufacturing Process

3. Challenges & Limitations

Heatsink Dependency

Electrostatic Discharge (ESD) Sensitivity

Saturation in High Voltage Applications

Counterfeit Risk in Open Markets

TO-220 Assembly Limitations

4. Costing

5. Properties & Characteristics

Type

Technology

Drain-Source Voltage (VDS Max)

Continuous Drain Current (ID Max)

On-Resistance (RDS(on))

Package

Gate Charge (Qg)

Thermal Resistance

Operating Temp Range

Use Case

6. Frequently Asked Questions

Drain-Source Voltage (V_DS Max)

Continuous Drain Current (I_D Max)

On-Resistance (R_DS(on))

Gate Charge (Q_g)